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IEC 60747-9:2019 ED3

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

Nov 13, 2019

General information

60.60     Nov 13, 2019

IEC

TC 47/SC 47E

International Standard

31.080.01     31.080.30  

English   French  

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Scope

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:

reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.

Life cycle

PREVIOUSLY

Revises
IEC 60747-9:2007 ED2

NOW

PUBLISHED
IEC 60747-9:2019 ED3
60.60 Standard published
Nov 13, 2019

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