IEC 62373-1:2020 ED1

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Publication date: 15 korr 2020

General information

Current stage: 60.60 Effective date: 15 korr 2020

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.30

Gjuha: anglisht frëngjisht

Buying

Statusi: Publikuar

PDF - 16 960 Lekë

Paper - 16 960 Lekë

CD - 16 960 Lekë

Language

Language in which you want to receive the document.

Scope

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.

Life cycle

NOW

PUBLISHED
IEC 62373-1:2020 ED1
60.60 Standard published
15 korr 2020

Preview

Only informative sections of projects are publicly available. To view the full content, you will need to members of the committee. If you are a member, please log in to your account by clicking on the "Log in" button.