IEC 60747-8-4:2004 ED1

Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

Publication date: 24 sht 2004

95.99 Withdrawal of Standard 31 dhj 2013

General information

Current stage: 95.99 Effective date: 31 dhj 2013

Originator: IEC

Owner: TC 47/SC 47E

Type: International Standard

ICS: 31.080.30

Gjuha: anglisht frëngjisht

Buying

Statusi: Replaced

PDF - 39 009 Lekë

Paper - 39 009 Lekë

CD - 39 009 Lekë

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Scope

Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes:
type B depletion (normally on) type and Type C enhancement (normally off) type.

Life cycle

NOW

WITHDRAWN
IEC 60747-8-4:2004 ED1
95.99 Withdrawal of Standard
31 dhj 2013

REVISED BY

PUBLISHED
IEC 60747-8:2010 ED3

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