IEC 60747-9:1998 ED1

Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Publication date: 20 nën 2001

General information

Current stage: 99.60 Effective date: 26 sht 2007

Originator: IEC

Owner: TC 47/SC 47E

Type: International Standard

ICS: 31.080.30

Gjuha: anglisht frëngjisht

Buying

Statusi: Revised

PDF - 59 927 Lekë

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CD - 59 927 Lekë

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Scope

Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).

Life cycle

NOW

IEC 60747-9:1998 ED1
99.60 Withdrawal effective
26 sht 2007

CORRIGENDA / AMENDMENTS

Amended by
IEC 60747-9:1998/AMD1:2001 ED1

Amended by
IEC 60747-9/AMD2 ED1

REVISED BY

IEC 60747-9:2007 ED2

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