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IEC 62373:2006 ED1

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Jul 18, 2006

General information

60.60     Jul 18, 2006

IEC

TC 47

International Standard

31.080.30  

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Provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET)

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PUBLISHED
IEC 62373:2006 ED1
60.60 Standard published
Jul 18, 2006

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